发明名称 |
METHOD OF FABRICATING THIN FILM TRANSISTOR SUBSTRATE |
摘要 |
<p>PURPOSE: A method for fabricating a thin film transistor substrate is provided to prevent the damage of the thin film pattern in the edge of a semitransparent region and a corresponding region. CONSTITUTION: A first conductive pattern(101) is formed. A second conductive pattern is formed. A protection layer and a pixel electrode are formed. A photoresist pattern(168) has a first height in a region corresponding to the edge of a common and, has a second height in a region corresponding to the other region of the common region, and has a third height in a region corresponding to a gate line and the common line.</p> |
申请公布号 |
KR20130052183(A) |
申请公布日期 |
2013.05.22 |
申请号 |
KR20110117487 |
申请日期 |
2011.11.11 |
申请人 |
LG DISPLAY CO., LTD. |
发明人 |
KU, SUN JU;AHN, SUNG HOON |
分类号 |
G02F1/136;G02F1/1343;H01L29/786 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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