发明名称 METHOD OF FABRICATING THIN FILM TRANSISTOR SUBSTRATE
摘要 <p>PURPOSE: A method for fabricating a thin film transistor substrate is provided to prevent the damage of the thin film pattern in the edge of a semitransparent region and a corresponding region. CONSTITUTION: A first conductive pattern(101) is formed. A second conductive pattern is formed. A protection layer and a pixel electrode are formed. A photoresist pattern(168) has a first height in a region corresponding to the edge of a common and, has a second height in a region corresponding to the other region of the common region, and has a third height in a region corresponding to a gate line and the common line.</p>
申请公布号 KR20130052183(A) 申请公布日期 2013.05.22
申请号 KR20110117487 申请日期 2011.11.11
申请人 LG DISPLAY CO., LTD. 发明人 KU, SUN JU;AHN, SUNG HOON
分类号 G02F1/136;G02F1/1343;H01L29/786 主分类号 G02F1/136
代理机构 代理人
主权项
地址