CRYSTALLIZATION METHOD OF AMORPHOUS SILICONE

摘要

PURPOSE: A method for crystallizing amorphous silicon is provided to implement a uniform image quality of a display device by reducing the growth of an unnecessary sub grain. CONSTITUTION: A buffer layer(110) is formed on a substrate(100). An amorphous silicon layer(120) is formed on the buffer layer. A first crystallization region is formed on the amorphous silicon layer by successively irradiating a first laser beam in a first scan direction. A second crystallization region is formed by successively irradiating a second laser beam in a second scan direction which is opposite of the first scan direction.