发明名称 |
Evaluation of etching conditions for pattern-forming film |
摘要 |
In conjunction with a photomask blank comprising a transparent substrate, a pattern-forming film, and an etch mask film, a set of etching conditions for the pattern-forming film is evaluated by measuring a first etching clear time (C1) taken when the etch mask film is etched under the etching conditions to be applied to the pattern-forming film, measuring a second etching clear time (C2) taken when the pattern-forming film is etched under the etching conditions, and computing a ratio (C1/C2) of the first to second etching clear time. |
申请公布号 |
EP2594992(A2) |
申请公布日期 |
2013.05.22 |
申请号 |
EP20120192907 |
申请日期 |
2012.11.16 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
IGARASHI, SHINICHI;YOSHIKAWA, HIROKI;INAZUKI, YUKIO;KANEKO, HIDEO |
分类号 |
G03F1/00;G03F1/26;G03F1/80;G06F19/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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