发明名称 |
Methods of optical proximity correction in manufacturing semiconductor devices |
摘要 |
A method of optical proximity correction for a photolithographic progress in manufacturing semiconductor devices is disclosed. The method includes providing an illumination source in an optical system, dividing the illumination source into a number of segments in the form of concentric rings, and assigning a first intensity level to a first ring of a first radius and assigning a second intensity level to a second ring of a second radius, wherein the first intensity level is smaller than or equal to the second intensity level when the first radius is smaller than or equal to the second radius.
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申请公布号 |
US8446565(B2) |
申请公布日期 |
2013.05.21 |
申请号 |
US20100685440 |
申请日期 |
2010.01.11 |
申请人 |
HSUAN CHUNG TE;WU TZONG-HSIEN;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
HSUAN CHUNG TE;WU TZONG-HSIEN |
分类号 |
G03B27/54 |
主分类号 |
G03B27/54 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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