发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
In one embodiment, a method of manufacturing a semiconductor device is disclosed. The method includes forming a cured film of an insulation resin on a surface of a first semiconductor chip and flip-chip bonding a second semiconductor via a bump on the first semiconductor chip on which the cured film of the insulation resin is formed. The insulation resin can be cured at temperature range from (A-50)° C. to (A+50)° C., wherein "A" is a solidification point of the bump.
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申请公布号 |
US8445321(B2) |
申请公布日期 |
2013.05.21 |
申请号 |
US20100887772 |
申请日期 |
2010.09.22 |
申请人 |
FUKUDA MASATOSHI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
FUKUDA MASATOSHI |
分类号 |
H01L21/44;H01L21/48;H01L21/50 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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