发明名称 |
Methods of fabricating semiconductor devices |
摘要 |
Methods for fabricating a semiconductor device are provided. In the methods, first material layers and second material layers may be alternatingly and repeatedly stacked on a substrate. An opening penetrating the first material layers and the second material layers may be formed. A semiconductor solution may be formed in the opening by using a spin-on process.
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申请公布号 |
US8445317(B2) |
申请公布日期 |
2013.05.21 |
申请号 |
US201113030454 |
申请日期 |
2011.02.18 |
申请人 |
JEONG JIN HA;KIM JUNG-HO;HWANG KIHYUN;SON YONG-HOON;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEONG JIN HA;KIM JUNG-HO;HWANG KIHYUN;SON YONG-HOON |
分类号 |
H01L21/84 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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