发明名称 |
Strained semiconductor devices and methods of fabricating strained semiconductor devices |
摘要 |
A structure and method of fabricating the structure. The structure includes a first region of a semiconductor substrate separated from a second region of the semiconductor substrate by trench isolation formed in the substrate; a first stressed layer over the first region; a second stressed layer over second region; the first stressed layer and second stressed layer separated by a gap; and a passivation layer on the first and second stressed layers, the passivation layer extending over and sealing the gap.
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申请公布号 |
US8445965(B2) |
申请公布日期 |
2013.05.21 |
申请号 |
US20100940115 |
申请日期 |
2010.11.05 |
申请人 |
ANDERSON BRENT A.;NOWAK EDWARD J.;RANKIN JED H.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ANDERSON BRENT A.;NOWAK EDWARD J.;RANKIN JED H. |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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