发明名称 |
Monolithic IC and MEMS microfabrication process |
摘要 |
Monolithic IC/MEMS processes are disclosed in which high-stress silicon nitride is used as a mechanical material while amorphous silicon serves as a sacrificial layer. Electronic circuits and micro-electromechanical devices are built on separate areas of a single wafer. The sequence of IC and MEMS process steps is designed to prevent alteration of partially completed circuits and devices by subsequent high process temperatures.
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申请公布号 |
US8445307(B2) |
申请公布日期 |
2013.05.21 |
申请号 |
US20100968594 |
申请日期 |
2010.12.15 |
申请人 |
YEH RICHARD;BLOOM DAVID M;ALCES TECHNOLOGY, INC. |
发明人 |
YEH RICHARD;BLOOM DAVID M |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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