发明名称 |
Manufacturing method and manufacturing apparatus of semiconductor device |
摘要 |
To provide a manufacturing method of a semiconductor device using an SOI substrate, by which mobility can be improved. A plurality of semiconductor films formed using a plurality of bond substrates (semiconductor substrates) are bonded to one base substrate (support substrate). At least one of the plurality of bond substrates has a crystal plane orientation different from that of the other bond substrates. Accordingly, at least one of the plurality of semiconductor films formed over one base substrate has a crystal plane orientation different from that of the other semiconductor films. The crystal plane orientation of the semiconductor film is determined in accordance with the polarity of a semiconductor element formed using the semiconductor film. For example, an n-channel element in which electrons are majority carriers is formed using a semiconductor film having a face {100}, and a p-channel element in which holes are majority carriers is formed using a semiconductor film having a face {110}.
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申请公布号 |
US8445359(B2) |
申请公布日期 |
2013.05.21 |
申请号 |
US201113161776 |
申请日期 |
2011.06.16 |
申请人 |
YAMAZAKI SHUNPEI;TANAKA KOICHIRO;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;TANAKA KOICHIRO |
分类号 |
H01L21/30;H01L21/46;H01L29/30 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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