发明名称 |
CMOS structure having multiple threshold voltage devices |
摘要 |
A method of forming a complementary metal oxide semiconductor (CMOS) structure having multiple threshold voltage devices includes forming a first transistor device and a second transistor device on a semiconductor substrate. The first transistor device and second transistor device initially have sacrificial dummy gate structures. The sacrificial dummy gate structures are removed and a set of vertical oxide spacers are selectively formed for the first transistor device. The set of vertical oxide spacers are in direct contact with a gate dielectric layer of the first transistor device such that the first transistor device has a shifted threshold voltage with respect to the second transistor device.
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申请公布号 |
US8445345(B2) |
申请公布日期 |
2013.05.21 |
申请号 |
US201113227750 |
申请日期 |
2011.09.08 |
申请人 |
CHENG KANGGUO;DORIS BRUCE B.;KHAKIFIROOZ ALI;KULKARNI PRANITA;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;DORIS BRUCE B.;KHAKIFIROOZ ALI;KULKARNI PRANITA |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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