Transparent nanocrystalline diamond contacts to wide bandgap semiconductor devices

摘要

A heterojunction between thin films of NCD and 4H-SiC was developed. Undoped and B-doped NCDs were deposited on both n- and p- SiC epilayers. I-V measurements on p+ NCD/n- SiC indicated Schottky rectifying behavior with a turn-on voltage of around 0.2 V. The current increased over eight orders of magnitude with an ideality factor of 1.17 at 30° C. Ideal energy-band diagrams suggested a possible conduction mechanism for electron transport from the SiC conduction band to either the valence band or acceptor level of the NCD film.