发明名称 |
Sacrificial offset protection film for a FinFET device |
摘要 |
A method for fabricating a semiconductor device is disclosed. An exemplary embodiment of the method includes providing a substrate; forming a fin structure over the substrate; forming a gate structure, wherein the gate structure overlies a portion of the fin structure; forming a sacrificial-offset-protection layer over another portion of the fin structure; and thereafter performing an implantation process.
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申请公布号 |
US8445340(B2) |
申请公布日期 |
2013.05.21 |
申请号 |
US20090622038 |
申请日期 |
2009.11.19 |
申请人 |
LEE TSUNG-LIN;YUAN FENG;YEH CHIH CHIEH;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LEE TSUNG-LIN;YUAN FENG;YEH CHIH CHIEH |
分类号 |
H01L21/8232;H01L21/84 |
主分类号 |
H01L21/8232 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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