Methods of fabricating semiconductor devices including semiconductor layers formed in stacked insulating layers

摘要

Methods of fabricating a semiconductor device include alternatingly and repeatedly stacking sacrificial layers and first insulating layers on a substrate, forming an opening penetrating the sacrificial layers and the first insulating layers, and forming a spacer on a sidewall of the opening, wherein a bottom surface of the opening is free of the spacer. A semiconductor layer is formed in the opening. Related devices are also disclosed.