发明名称 |
Non-volatile memory using pyramidal nanocrystals as electron storage elements |
摘要 |
A non-volatile memory device includes a floating gate with pyramidal-shaped silicon nanocrystals as electron storage elements. Electrons tunnel from the pyramidal-shaped silicon nanocrystals through a gate oxide layer to a control gate of the non-volatile memory device. The pyramidal shape of each silicon nanocrystal concentrates an electrical field at its peak to facilitate electron tunneling. This allows an erase process to occur at a lower tunneling voltage and shorter tunneling time than that of prior art devices.
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申请公布号 |
US8446779(B2) |
申请公布日期 |
2013.05.21 |
申请号 |
US20090583486 |
申请日期 |
2009.08.21 |
申请人 |
QUEK ELGIN;YIN CHUNSHAN;TAN SHYUE SENG;LEE JAE GON;TAN CHUNG FOONG;GLOBALFOUNDRIES SINGAPORE PTE. LTD. |
发明人 |
QUEK ELGIN;YIN CHUNSHAN;TAN SHYUE SENG;LEE JAE GON;TAN CHUNG FOONG |
分类号 |
G11C16/04;H01L29/788 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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地址 |
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