| 摘要 |
An integrated circuit containing CMOS logic gates and a logic-cell-compatible decoupling capacitor adjacent to the logic gates, in which the decoupling capacitor includes p+/n and n+/p capacitors, resistors between 1 and 1000 ohms connecting the capacitors to Vdd and Vss buses, and gate elements which have widths and spacings similar to the adjacent logic gates. A process of forming an integrated circuit containing CMOS logic gates and a logic-cell-compatible decoupling capacitor adjacent to the logic gates, in which the decoupling capacitor includes p+/n and n+/p capacitors, resistors between 1 and 1000 ohms connecting the capacitors to Vdd and Vss buses, and gate elements which have widths and spacings similar to the adjacent logic gates.
|
