III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND PROCESS FOR MANUFACTURING SAME

摘要

A III nitride semiconductor light emitting device with improved light emission efficiency achieved without significantly increasing forward voltage by achieving both good ohmic contact between an electrode and a semiconductor layer, and sufficient functionality of a reflective electrode layer, and a method for manufacturing the same. The III nitride semiconductor light emitting device 100 of the present invention has a III nitride semiconductor laminate 106 including an n-type semiconductor layer 103, a light emitting layer 104, and a p-type semiconductor layer 105; an n-side electrode 112, a p-side electrode 113; and a composite layer 111 having a reflective electrode portion 109 and a contact portion 110 made of Al x Ga 1-x N (0 ‰¤ x ‰¤ 0.05) on a second surface 108 of the III nitride semiconductor laminate 106. The second surface 108 is opposite to a first surface 107 on the light extraction side.