PURPOSE: A plasma processing method is provided to prevent the corrosion of a magnetic wafer and to efficiently remove a deposit formed in an etching chamber due to a reaction product. CONSTITUTION: A discharge unit(2) is made of a non-conductive material of quartz or ceramic. A plasma processing part(3) includes an electrode(6) for supplying high frequency bias power. An inducing antenna consisting of a first inducing antenna(1a) and a second inducing antenna(1b) is installed in the outside of the discharge unit. A faraday shield(9) which is a capacitive coupling antenna is installed between the inducing antenna and the discharge unit. A first radio frequency power source(10) supplies the high frequency power for producing plasma to the inducing antenna.
