发明名称 POWER AMPLIFICATION CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To provide a power amplification circuit that has a bias circuit with a temperature compensation circuit for suppressing temperature dependence of a gain of the power amplification circuit. <P>SOLUTION: The power amplification circuit that has an amplifying transistor having a drain connected to a high potential and a source grounded and controls a bias current to the amplifying transistor by means of a current mirror transistor CMTr having a source grounded and a gate connected to a gate of the amplifying transistor GTr includes: a first diode D1 having an anode connected to a control power terminal; a second diode D2 having an anode coupled to a cathode of the first diode D1 and a cathode connected to a drain of the current mirror transistor CMTr; a first resistive element R1 having one terminal connected to the cathode of the second diode D2 and the other terminal grounded; and a second resistive element R2 connected in parallel with the second diode D2. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013098904(A) 申请公布日期 2013.05.20
申请号 JP20110242214 申请日期 2011.11.04
申请人 SHARP CORP 发明人 OISHI SHINGO
分类号 H03F1/30;H03F3/189;H03F3/24 主分类号 H03F1/30
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