NITRIDE SEMICONDUCTOR ELEMENT, NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER AND NITRIDE SEMICONDUCTOR ELEMENT MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor element which can obtain ohmic contact between a nitride semiconductor layer and an electrode while inhibiting a damage applied to the nitride semiconductor layer.

SOLUTION: A light-emitting element (nitride semiconductor element) 1 comprises: a substrate 10 having a principal surface 10a; and a semiconductor layer 20 including an n-type layer 20a, an n-type contact layer 20b and a p-type layer 20d. The principal surface 10a has a predetermined off angle with respect to an m-plane in an a-axis direction. The semiconductor layer 20 includes an inclined region 21 and a non-inclined region 22. In the inclined region 21, an n electrode 40 is formed on predetermined regions of the n-type layer 20a and the n-type contact layer 20b.

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