| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate for resin seal-type semiconductor device which allows good thermal conductivity and insulation property to be obtained with stability, and which is excellent in terms of productivity, and to provide a resin seal-type semiconductor device and a method of manufacturing the same. <P>SOLUTION: The metal base substrate 1 comprises: a metal base material 2; and an insulator layer 3b of B stage state formed on the metal base material by use of an epoxy resin composition. The epoxy resin composition includes at least an epoxy resin, a UV light-curing type setting agent and a heat-curing type setting agent, or a heat UV light-curing type setting agent, and an inorganic filler; the content of the inorganic filler is 50-80 vol.%. <P>COPYRIGHT: (C)2013,JPO&INPIT |
