| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a semiconductor module having excellent heat dissipation of a high frequency integrated circuit with the suppression of a characteristic variation and electromagnetic wave leakage. <P>SOLUTION: The semiconductor module includes: a metal carrier 2; a dielectric multilayer substrate 1 bonded on the metal carrier 2 and having a thermal via hole 14 and an RF line 10, with a connection pad for the RF line 10 disposed on the lower surface in a portion protruding from the metal carrier 2; An RFIC 4 mounted on the dielectric multilayer substrate 1 and electrically connected to the RF line 10 on the surface of the dielectric multilayer substrate 1, and thermally connected to the metal carrier 2 through the thermal via hole 14; an input/output interface substrate 3 disposed in a manner to overlap with the portion of the dielectric multilayer substrate 1 protruding from the metal carrier 2, and having an RF line 9 formed in such a manner that a connection pad faces the connection pad for the RF line 10; a resilient contact terminal 7 held between signal connection pads 6, 8 for electric connection therebetween; and a chassis 5 for the housing thereof. <P>COPYRIGHT: (C)2013,JPO&INPIT |
