SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to reduce power consumption by injecting impurities for controlling a threshold voltage into a gate insulation layer. CONSTITUTION: A gate insulation layer is formed on a substrate and includes impurities for controlling a threshold voltage. The substrate includes an NMOSFET region. The impurities for controlling the threshold voltage include nitrogen. A metal electrode(45) is formed on the gate insulation layer. An interfacial layer(43) is formed between the substrate and the gate insulation layer.