LAYER STRUCTURE INCLUDING A SINGLE CRYSTAL SEMICONDUCTOR AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: A thin film structure and a forming method thereof are provided to obtain a high electrical property by including a single crystal semiconductor layer with uniform crystallinity. CONSTITUTION: Blocking patterns(104) are formed on a substrate and suppresses the growth of a single crystal semiconductor layer(106). The single crystal semiconductor layer is formed on the substrate between the blocking patterns. The single crystal semiconductor layer is formed with a selective epitaxial growing process and is formed in a gap between the blocking patterns.