| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has excellent heat radiation performance and which can inhibit warp. <P>SOLUTION: A semiconductor device of an embodiment comprises: a semiconductor substrate 10 composed of gallium arsenic; an active layer 15 provided on the semiconductor substrate 10; a first Ni layer 12 provided on an undersurface of the semiconductor substrate 10 opposed to the active layer 15; a Cu layer 14 provided on an undersurface of the first Ni layer; and a second Ni layer 16 provided on an undersurface of the Cu layer 14. According to the present embodiment, a semiconductor device capable of ensuring excellent heat radiation performance and inhibiting warp can be provided. <P>COPYRIGHT: (C)2013,JPO&INPIT |
