METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS

摘要

PURPOSE: A method for manufacturing a semiconductor device and a substrate processing apparatus are provided to improve the productivity of a titanium nitride film by simultaneously supplying a first processing gas and a second processing gas. CONSTITUTION: TiCl4 is supplied through a first nozzle and NH3 is supplied through a second nozzle(S11). The TiCl4 is not supplied to a processing chamber by closing a valve of a supply tube and the TiCl4 is supplied to a vent line by opening the valve of the supply tube(S12). The NH3 is not supplied to the processing chamber by closing the valve of the supply tube(S13). The NH3 is supplied to the processing chamber by opening the valve of the supply tube(S14). The NH3 is not supplied to the processing chamber by closing the valve of the supply tube(S15). [Reference numerals] (410) First nozzle(TiCl4); (420) Second nozzle(NH3); (AA) 1 cycle