| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a double-sided polishing method of stably improving flatness of a wafer, without being affected by the temporal change in carrier thickness. <P>SOLUTION: In double-sided polishing of a wafer, the wafer held by the carrier is clamped by upper and lower surface plates with polishing clothes stuck thereon, rotating and revolving the carrier, and polishing both sides of the wafer simultaneously while supplying a polishing agent thereto. The double-sided polishing method includes: a first polishing step of polishing the wafer at a high polishing rate; and a second polishing step of polishing the wafer at a low polishing rate. The double-sided polishing method further includes: a step of measuring flatness of the wafer after polishing; and a step of setting a polishing condition in the second polishing step of the next polishing, on the basis of the result of measuring the flatness. <P>COPYRIGHT: (C)2013,JPO&INPIT |
