COPPER ALLOY FOR ELECTRONIC DEVICE, METHOD FOR PRODUCING COPPER ALLOY FOR ELECTRONIC DEVICE, COPPER ALLOY ROLLED MATERIAL FOR ELECTRONIC DEVICE, AND COMPONENT FOR ELECTRONIC DEVICE

摘要

PROBLEM TO BE SOLVED: To provide: a copper alloy for an electronic device, which has a low Young's modulus, high proof stress, high conductivity, excellent stress relaxation resistance, and excellent bendability and is suitable for a component of an electronic device, such as a terminal, a connector, and a relay; a method for producing the copper alloy for an electronic device; a copper alloy rolled material for an electronic device; and a component for an electronic device.

SOLUTION: The copper alloy for an electronic device includes Mg in the range of 3.3-6.9 atom%, with the balance substantially including Cu and unavoidable impurities. When defining the concentration of Mg as X atom%, the electrical conductivity σ (%IACS) is within the following range: σ≤1.7241/(-0.0347×X2+0.6569×X+1.7)×100. A stress-relaxation rate at 150°C for 1,000 hours is 50% or less. In observation using a scanning electron microscope, the average number of an intermetallic compound including Cu and Mg as the major components with a grain size of 0.1 μm or more is 1 piece/μm2or less.

COPYRIGHT: (C)2013,JPO&INPIT