| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gate drive circuit capable of satisfying low loss characteristics by fast switching while satisfying constraint conditions of an applicable gate voltage and inhibiting an unauthorized operation as an inverter, such as an erroneous on-operation. <P>SOLUTION: A gate resistance (Rg1) 3 is provided on the gate side of a junction field effect transistor (JFET) 1 formed from SiC and is connected with a gate power supply (Vsg) 7 through a switch 5. In addition, between the gate and source of the JFET 1, there is provided a capacitor (Cg) 11 with a capacitance larger than a floating capacitance (Cf1) 9 generated between the drain and gate of the JFET 1. <P>COPYRIGHT: (C)2013,JPO&INPIT |
