| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting device achieving increased reliability and improved luminous efficiency by using a light emitting diode in which a GaN substrate is effectively utilized as a current path. <P>SOLUTION: The light emitting device includes: a light emitting diode element represented as the following (A); a control circuit controlling so that a current applied on the light emitting diode element does not exceed a maximum current I<SB POS="POST">max</SB>. In the light emitting device, (a) I<SB POS="POST">max</SB>/A<SB POS="POST">A</SB>≥220 [A/cm<SP POS="POST">2</SP>] is satisfied, and (b) an I-V curve of the light emitting diode element represented as the following (A) has not a point where a rate of change of the inclination of the curve converts from decrease to increase, within a range of 20 (mA) to I<SB POS="POST">max</SB>(mA). (A) In the light emitting diode element, a lamination structure having a plurality of GaN based semiconductor layers including an active layer is provided on the principle plane of a GaN based semiconductor substrate, an n-side electrode is formed on a part of a surface of the GaN based semiconductor substrate or a surface of a contact layer laminated on the GaN based semiconductor substrate, and an area A<SB POS="POST">E</SB>of the n-side electrode is equal to or less than 20% of an area A<SB POS="POST">A</SB>of the active layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
