| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an apparatus for producing a ta-C layer which is at least substantially hydrogen-free on substrates (workpieces) of metal or ceramic materials. <P>SOLUTION: The apparatus 10 includes (a) a vacuum chamber 14 which is connectable to an inert gas source and a vacuum pump, (b) a support device for a plurality of substrates (workpieces) 12 which is inserted into or insertable into the vacuum chamber, (c) a graphite cathode 16 which functions as a source of a carbon material and has an associated magnet arrangement for forming a magnetron, (d) a bias power supply 32 which applies a negative bias voltage to the substrate on the support device, and (e) a cathode power supply 18 for the cathode, which is connectable to the graphite cathode and an associated anode, wherein the cathode power supply 18 is designed to transmit high power pulse sequences spaced at (preferably programmable) intervals of time, with each high power pulse sequence comprising a series of high frequency DC pulses adapted to be supplied, optionally after a build-up phase, to the graphite cathode. <P>COPYRIGHT: (C)2013,JPO&INPIT |
