发明名称 |
DEPOSITION APPARATUS AND DEPOSITION METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a deposition apparatus and a deposition method, which can uniform a temperature distribution in a circumferential direction of a substrate. <P>SOLUTION: A deposition apparatus 100 comprises: a chamber 1 to which a reaction gas 4 is supplied and in which a deposition process is performed; a susceptor 8 arranged in the camber 1 and on which a substrate 7 is placed; and a heater 9 for heating the susceptor 8 from under. The susceptor 8 has a ring-shaped first susceptor part 8a and a second susceptor part 8b provided in contact with the first susceptor part 8a and shielding an opening of the first susceptor 8a. A surface of the second susceptor part 8b which faces a heating part slants from a horizontal plane. The first susceptor part 8a has different shapes in a circumferential direction corresponding to thicknesses of the second susceptor part 8b. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013098340(A) |
申请公布日期 |
2013.05.20 |
申请号 |
JP20110239707 |
申请日期 |
2011.10.31 |
申请人 |
NUFLARE TECHNOLOGY INC |
发明人 |
SUZUKI KUNIHIKO;SATO HIROSUKE |
分类号 |
H01L21/205;C23C16/46;C30B25/12 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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