发明名称 METHOD OF POLISHING USING TUNABLE POLISHING FORMULATION
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for chemical mechanical polishing of a substrate having a polysilicon overburden deposited over silicon nitride using multiple dilutions of a chemical mechanical polishing composition concentrate to polish the substrate. <P>SOLUTION: In the method, a first dilution of the concentrate used to polish the substrate is tuned to exhibit a first polysilicon removal rate and a first polysilicon-to-silicon nitride removal rate selectivity; and a second dilution of the concentrate used to polish the substrate is tuned to exhibit a second polysilicon removal rate and a second polysilicon-to-silicon nitride removal rate selectivity. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013098557(A) 申请公布日期 2013.05.20
申请号 JP20120235708 申请日期 2012.10.25
申请人 ROHM & HAAS ELECTRONIC MATERIALS CMP HOLDINGS INC 发明人 YI GWO;KANCHARA ARUN KUMAR LADY
分类号 H01L21/304;B24B37/00;C09K3/14 主分类号 H01L21/304
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