发明名称 |
METHOD OF POLISHING USING TUNABLE POLISHING FORMULATION |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for chemical mechanical polishing of a substrate having a polysilicon overburden deposited over silicon nitride using multiple dilutions of a chemical mechanical polishing composition concentrate to polish the substrate. <P>SOLUTION: In the method, a first dilution of the concentrate used to polish the substrate is tuned to exhibit a first polysilicon removal rate and a first polysilicon-to-silicon nitride removal rate selectivity; and a second dilution of the concentrate used to polish the substrate is tuned to exhibit a second polysilicon removal rate and a second polysilicon-to-silicon nitride removal rate selectivity. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013098557(A) |
申请公布日期 |
2013.05.20 |
申请号 |
JP20120235708 |
申请日期 |
2012.10.25 |
申请人 |
ROHM & HAAS ELECTRONIC MATERIALS CMP HOLDINGS INC |
发明人 |
YI GWO;KANCHARA ARUN KUMAR LADY |
分类号 |
H01L21/304;B24B37/00;C09K3/14 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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