| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an SOI wafer which can prevent an occurrence of an electrostatic absorption phenomenon between the SOI wafer and a conveyance stage used in wafer manufacturing facilities. <P>SOLUTION: An SOI wafer 1 comprises: a support substrate semiconductor wafer 10 on which a silicon oxide film 11 is deposited on an entire surface and composed of a single crystal silicon; an active layer 22 formed on a first principal surface of the support substrate semiconductor wafer 10 and composed of a single crystal silicon; and a conductive film 33 having conductivity and formed on a second principal surface opposed to the first principal surface on which the active layer 22 of the support substrate semiconductor wafer 10 is formed. <P>COPYRIGHT: (C)2013,JPO&INPIT |
