| 摘要 |
<P>PROBLEM TO BE SOLVED: To correct aberration in an electron beam lithography system. <P>SOLUTION: One embodiment is concerned with an apparatus for correcting aberration in the electron beam lithography system. An internal electrode surrounds a pattern generation device and at least one external electrode exists around the internal electrode. Each of the internal electrode and the external electrode has a flat surface in the plane of the pattern generation device. A circuit is constituted so as to apply an internal voltage level to the internal electrode and apply at least one external voltage level to at least one external electrode. A voltage level can be set so as to correct a warp of an image surface in the electron beam lithography system. Another embodiment is concerned with an apparatus to be used in an electron beam based system such as an electron beam inspection system, a re-inspection system or a measuring system to correct aberration. The other embodiments and features are also disclosed. <P>COPYRIGHT: (C)2013,JPO&INPIT |
