SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing occurrence of a leakage failure and using a thin substrate, and a manufacturing method thereof.

SOLUTION: A semiconductor chip 30 of a semiconductor device comprises: a first conductivity type layer 34 formed in a surface layer part of a semiconductor substrate 35; a gate insulating film 37 formed on a surface of the first conductivity type 34; a gate electrode 38 formed on the gate insulating film 37; an interlayer insulating film 41 which is disposed on a principal surface 35a of the semiconductor substrate 35 and in which a contact hole 42 through which a part of the principal surface 35a is exposed is formed; an upper electrode 43 composed of a material containing aluminum, disposed on the interlayer insulating film 41, and connected to the semiconductor substrate 35 via the contact hole 42; a plating film 44 composed of a material containing nickel and formed on the upper electrode 43; and a lower electrode 46 formed on a rear surface 35b of the semiconductor substrate 35. A film thickness t of a part formed in the contact hole 42 of the upper electrode 43 is greater than or equal to 2 μm.

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