MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, ADHESIVE FILM AND PASTING METHOD OF ADHESIVE FILM

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device with which high bonding reliability can be achieved by suppressing voids when pasting an adhesive film and a semiconductor wafer.

SOLUTION: A manufacturing method of a semiconductor device includes the steps of confronting an adhesive agent layer of an adhesive film and a semiconductor wafer with a clearance less than or equal to 1 cm therebetween, pasting the adhesive agent layer of the adhesive film and the semiconductor wafer with pressure of 0.1 to 1 MPa at 50 to 100°C under heated vacuum of 10000 Pa or less, obtaining a semiconductor wafer with the adhesive agent layer, individualizing the semiconductor wafer with the adhesive agent layer into a semiconductor chip with the adhesive agent layer, and mounting the semiconductor chip with the adhesive agent layer. In the adhesive agent layer of the adhesive film, a tack value measured according to a probe tack method on its surface pasted to the semiconductor wafer is 100 gf/5 mmϕ or more at a pasting temperature.

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