| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sputtering target having superior machine workability and being able to produce a compound film primarily containing Cu and Ga; and a method for producing the same. <P>SOLUTION: The sputtering target has an elemental composition containing, with respect to all the metal elements in the sputtering target, 15-40 atom% of Ga and 0.1-5 atom% of Bi, the balance including Cu and unavoidable impurities. The method for producing the sputtering target includes a step for melting at least the elements Cu, Ga, and Bi as elemental substances or alloys including at least two of the elements at 1,050°C or higher to produce an ingot. Alternately, the method includes: a step for producing a raw material powder having at least the elements Cu, Ga, and Bi as a powder of the elementary substances or of alloys including at least two of the elements; and a step for hot working the raw material powder in a vacuum, an inert atmosphere, or a reducing atmosphere. <P>COPYRIGHT: (C)2013,JPO&INPIT |
