发明名称 POWER SEMICONDUCTOR MODULE
摘要 <P>PROBLEM TO BE SOLVED: To enable compact mounting of, for example, 12 arms on a single semiconductor power module, to dispose a DC terminal and an AC terminal on a module end face, and to maintain low inductance of a power circuit. <P>SOLUTION: On one insulation substrate 108, two pairs of upper arms (100, 104 and 102, 106) are disposed on the upper right and left of the insulation substrate, and two pairs of lower arms (101, 105 and 103, 107) are disposed on the lower right and left of the insulation substrate. As wiring patterns on the insulation substrate, the two pairs of upper arms are mounted on a first wiring pattern C01, and the two pairs of lower arms are mounted on a second and a third wiring pattern C02, C02 disposed below the first wiring pattern. The first wiring pattern C01 is extended between the second and third wiring patterns, and to the extended end portion, wiring from a positive electrode terminal T01 is connected. Further, by mounting three insulation substrates 108 juxtaposed in one module, a 12-in-1 module is configured. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013098425(A) 申请公布日期 2013.05.20
申请号 JP20110241405 申请日期 2011.11.02
申请人 HITACHI LTD 发明人 HORIUCHI KEISUKE;NISHIHARA ATSUO;MORI MUTSUHIRO;NEMOTO YASUHIRO;AZUMA KATSUNORI
分类号 H01L25/07;H01L21/60;H01L25/18;H02M7/48 主分类号 H01L25/07
代理机构 代理人
主权项
地址