发明名称 |
MASK FOR EXPOSURE AND METHOD OF FABRICATING SUBSTRATE USING SAID MASK |
摘要 |
Provided is a photolithography mask capable of forming fine patterns beyond a critical resolution of an exposer without replacing or changing the exposer. The mask includes an at least partially light absorbing phase shift layer and uses a complex wavelength light source.
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申请公布号 |
US2013122403(A1) |
申请公布日期 |
2013.05.16 |
申请号 |
US201213471080 |
申请日期 |
2012.05.14 |
申请人 |
KIM BONG-YEON;KANG MIN;LEE JONG KWANG;JU JIN HO |
发明人 |
KIM BONG-YEON;KANG MIN;LEE JONG KWANG;JU JIN HO |
分类号 |
G03F7/20;G03F1/26 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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