发明名称 |
CIRCUIT AND METHOD FOR CONTROLLING WRITE TIMING OF A NON-VOLATILE MEMORY |
摘要 |
A circuit and a method for controlling the write timing of a non-volatile memory are provided. The method includes the following steps. First, a resistance state switching of at least one memory cell of the non-volatile memory executing a writing operation is monitored to output a control signal. The memory cell stores data states with different resistance states. A write timing is input to the memory cell through a timing control line. Next, the write timing is generated based on a clock signal and the control signal. The write timing is enabled at the beginning of a cycle of the clock signal, and is disabled when the memory cell finishes the resistance state switching.
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申请公布号 |
US2013121058(A1) |
申请公布日期 |
2013.05.16 |
申请号 |
US201213345740 |
申请日期 |
2012.01.08 |
申请人 |
CHIU PI-FENG;SHEU SHYH-SHYUAN;LIN WEN-PIN;LIN CHIH-HE;INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
CHIU PI-FENG;SHEU SHYH-SHYUAN;LIN WEN-PIN;LIN CHIH-HE |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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