发明名称 |
PNP BIPOLAR JUNCTION TRANSISTOR FABRICATION USING SELECTIVE EPITAXY |
摘要 |
Lateral PNP bipolar junction transistors, methods for fabricating lateral PNP bipolar junction transistors, and design structures for a lateral PNP bipolar junction transistor. An emitter and a collector of the lateral PNP bipolar junction transistor are comprised of p-type semiconductor material that is formed by a selective epitaxial growth process. The source and drain each directly contact a top surface of a device region used to form the emitter and collector. A base contact may be formed on the top surface and overlies an n-type base defined within the device region. The emitter is laterally separated from the collector by the base contact. Another base contact may be formed in the device region that is separated from the other base contact by the base. |
申请公布号 |
US2013119516(A1) |
申请公布日期 |
2013.05.16 |
申请号 |
US201113294697 |
申请日期 |
2011.11.11 |
申请人 |
HARAME DAVID L.;LIU QIZHI;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HARAME DAVID L.;LIU QIZHI |
分类号 |
H01L21/8224;H01L29/735 |
主分类号 |
H01L21/8224 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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