发明名称 |
Nitrogen Reactive Sputtering of Cu-In-Ga-N for Solar Cells |
摘要 |
Methods for forming Cu-In-Ga-N (CIGN) layers for use in TFPV solar panels are described using reactive PVD deposition in a nitrogen containing atmosphere. In some embodiments, the CIGN layers can be used as an absorber layer and eliminate the need of a selenization step. In some embodiments, the CIGN layers can be used as a protective layer to decrease the sensitivity of the CIG layer to oxygen or moisture before the selenization step. In some embodiments, the CIGN layers can be used as an adhesion layer to improve the adhesion between the back contact layer and the absorber layer.
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申请公布号 |
US2013122643(A1) |
申请公布日期 |
2013.05.16 |
申请号 |
US201313738931 |
申请日期 |
2013.01.10 |
申请人 |
INTERMOLECULAR, INC.;INTERMOLECULAR, INC. |
发明人 |
DING GUOWEN;LE MINH HUU;ZHANG GUIZHEN |
分类号 |
H01L31/032 |
主分类号 |
H01L31/032 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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