CHEMICAL OF VAPOR PHASE DEPOSITION SYSTEM FOR CONTINUOUS PROCESS

摘要

PURPOSE: A chemical vapor deposition apparatus for a continuous process is provided to deposit semiconductor materials of high quality by supplying only the reaction gas corresponding to each reaction chamber. CONSTITUTION: A plurality of reaction chambers(10) have reaction spaces, respectively. The reaction chamber gives a different reaction condition to a wafer received in each reaction chamber. A position changing member(40,50) changes the location of a wafer carrier(30). An external chamber(100) fixes the location of the reaction chamber. The external chamber protects the wafer not to be exposed to external contaminants.