| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which enables bonding at a low temperature and can raise a fusion temperature of solder bumps after bonding. <P>SOLUTION: A semiconductor device manufacturing method comprises: a step of forming a first connection pad 11a on a principal surface 11A of a first connection member 11; a step of forming a second connection pad 21a on a circuit formation surface 21A of a semiconductor chip 21; a step of placing the semiconductor chip on the first connection member such that the first connection pad contacts the second connection pad via a solder bump 31A composed of an Sn-Bi alloy; a step of bonding the first connection pad and the second connection pad by reflow of the solder bump; and a step of causing, after the bonding step, one of the first and the second connection pads to function as an anode and the other as a cathode and supplying a direct current from the anode to the cathode to concentrate Bi in the solder bump to the anode side and Sn in the solder bump to the cathode side. <P>COPYRIGHT: (C)2013,JPO&INPIT |
