| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can electrically detect damages of an insulation layer under a bonding pad, which is caused by a stress generated in wire bonding; and a semiconductor device testing method which can detect introduced damages to determine non-defective or defective. <P>SOLUTION: A semiconductor device (power IC) comprises: a polysilicon 5 arranged on an oxide film 4; a pn diode 9 formed on the polysilicon 5; a first bonding pad 11 arranged on an n-cathode layer 6 while sandwiching an interlayer insulation film 10; and a second bonding pad 12 arranged on a p-anode layer 7. By this configuration, the semiconductor device can electrically detect whether damages introduced to the interlayer insulation film 10 penetrate the interlayer insulation film 10. <P>COPYRIGHT: (C)2013,JPO&INPIT |
