| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which achieves high withstanding voltage by inhibiting local concentration of an electric field. <P>SOLUTION: A semiconductor device comprises: a first drift region 140 of a first conductivity type provided at a distance from a source region 110 when viewed from above; a second drift region 150 of a first conductivity type contacting a region in the first drift region 140, which is on an opposite side to the source region 110 when viewed from above; a drain region 120 of a first conductivity type arranged at a distance from the first drift region 140 when viewed from above, and contacting a region in the second drift region 150, which is on an opposite side to the first drift region 140 when viewed from above; a gate insulation layer 200 and a gate electrode 400 provided on a channel region 130; a first field plate insulation layer 300 provided on a semiconductor substrate 100 so as to overlap a part of the first drift region 140 and a part of the second drift region 150 when viewed from above; and a first field plate electrode 420 contacting the first field plate insulation layer 300. <P>COPYRIGHT: (C)2013,JPO&INPIT |
