| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor light-emitting diode suppressing reduction in luminous efficiency, and to provide a manufacturing method thereof. <P>SOLUTION: An LED chip (a nitride-based semiconductor light-emitting diode) 30 comprises: a light-emitting device layer 12 which includes a crystal growth surface 12a of (000-1) plane, and a crystal growth surface 12b of (11-22) plane in a region opposing to the crystal growth surface 12a; and a support substrate 32 jointed to the light-emitting device layer 12 through a jointing layer 33. <P>COPYRIGHT: (C)2013,JPO&INPIT |
