发明名称 SUBSTRATE PROCESSING APPARATUS, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND ELECTRODE
摘要 <P>PROBLEM TO BE SOLVED: To make the quality of a substrate to be processed uniform by making an electrode less likely to shrink. <P>SOLUTION: The substrate processing apparatus includes a processing chamber for housing substrates, a gas supply unit for supplying process gas into the processing chamber, a pair of electrodes to which a high frequency power is applied in order to bring the process gas into active state, and a housing tube for housing the pair of electrodes, respectively, in a state where they are bent in at least one place. The electrode has a core wire composed of a metal, a plurality of tube bodies coupled by the core wire so as to be foldable, and a braided member composed of a metal and provided to cover the plurality of tube bodies. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013093618(A) 申请公布日期 2013.05.16
申请号 JP20130020673 申请日期 2013.02.05
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人
分类号 H01L21/31;C23C16/505 主分类号 H01L21/31
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