发明名称 PHOTORESIST AND POST ETCH RESIDUE CLEANING SOLUTION
摘要 <p>A photoresist and post etch cleaning solution for semiconductor wafers comprising: A. a polar aprotic solvent, B. an inorganic base; C. a co-solvent for said inorganic base; D. a unsaturated cycloaliphatic compound having a ring ether group and at least one substituent bearing a primary hydroxyl group; E. an organic base comprising an amine compound; and F. a nonionic surfactant bearing at least one ether group. The wafer containing photoresist residue or post etch residue can be cleaned by contacting the solution in a spray or immersion.</p>
申请公布号 WO2013070499(A1) 申请公布日期 2013.05.16
申请号 WO2012US63154 申请日期 2012.11.02
申请人 DYNALOY, LLC 发明人 POLLARD, KIMBERLY, DONA;PFETTSCHER, DONALD, JAMES;HATFIELD, MEAGAN;HOCHSTETLER, SPENCER, ERICH;GILBERT, NICHELLE, MARIA;PHENIS, MICHAEL, TOD
分类号 C11D1/72;C11D3/04;C11D3/20;C11D3/30;C11D3/34;G03F7/42 主分类号 C11D1/72
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