发明名称 ETCHANT COMPOSITION AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR USING THE SAME
摘要 <p>Provided is an etchant composition. The etchant composition according to an exemplary embodiment of the present invention includes ammonium persulfate ((NH4)2)S2,O8,an azole-based compound, a water-soluble amine compound, a sulfonic acid-containing compound, a nitrate-containing compound, and water.</p>
申请公布号 WO2013069873(A1) 申请公布日期 2013.05.16
申请号 WO2012KR05540 申请日期 2012.07.12
申请人 SAMSUNG DISPLAY CO., LTD.;DONGJIN SEMICHEM CO., LTD.;KIM, BONG-KYUN;PARK, HONG SICK;LEE, WANG WOO;PARK, YOUNG WOO;CHOI, SHIN IL;KIM, SANG-WOO;LEE, KI-BEOM;LEE, DAE-WOO;CHO, SAM-YOUNG;CHOI, JEONG-HEON 发明人 KIM, BONG-KYUN;PARK, HONG SICK;LEE, WANG WOO;PARK, YOUNG WOO;CHOI, SHIN IL;KIM, SANG-WOO;LEE, KI-BEOM;LEE, DAE-WOO;CHO, SAM-YOUNG;CHOI, JEONG-HEON
分类号 C09K13/06;H01L29/786 主分类号 C09K13/06
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